Effect of Mold Severity on Seed Traits Governing Potential Performance of Sorghum

Devi, M Y and Meenakumari, K V S and Tonapi, V A and Varanavasiappan, S and Ankaiah, R and Navi, S S and Thakur, R P (2005) Effect of Mold Severity on Seed Traits Governing Potential Performance of Sorghum. Indian Journal of Plant Protection, 33 (2). pp. 253-260. ISSN 0253-4355

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Mould (Alternaria, Aspergillus, Curvularia, Drechslera, Fusarium, Penicillium and Phoma) severity and seed quality were evaluated in 49 genotypes of sorghum (hybrids, cultivars, parental lines and lines) subjected to the following treatments: cultivation under natural conditions, cultivation in a protective shelter (SP), or exposure to high humidity from flowering to physiological maturity or from physiological maturity to post-physiological maturity. Grain hardness (6.91 kg/cm2), water absorption (0.23%), seed germination (47.12%), dehydrogenase activity in seeds (0.88), vigour index (242) and germination value (42.0) were highest, and electrical conductivity (143.81 µmhos/cm), mould score (2.6) and floury endosperm percentage (72%) were lowest under SP, suggesting that this system was the most favourable in terms of seed quality and mould incidence. Among the genotypes, IS 25017 had the hardest grains (7.69 kg/cm2). Seed germination in cold test was greatest in ICSV88002 (77.8%). IS 14332 recorded the lowest electrical conductivity (83.5 µmhos/cm). The lowest mould score (2.0) was registered for IS 14384, IS 9478 and RS 29. IS 14384 had the lowest floury endosperm percentage (51.0%), whereas CSV4 recorded the lowest corneous endosperm percentage (8%). The greatest dehydrogenase activity was observed in 296B seeds (1.20). The following genotypes were superior in resistance to mould and seed quality: IS 8545, IS 3443, IS 18758C-618-2, SPV 819, IS 25017, IS 14384, IS 9478, IS 30469C-140 and SPV 472.

Item Type: Article
Subjects: Mandate crops > Sorghum
Depositing User: Library ICRISAT
Date Deposited: 13 Dec 2011 11:02
Last Modified: 13 Dec 2011 11:02
URI: http://oar.icrisat.org/id/eprint/4941
Official URL:
Acknowledgement: UNSPECIFIED
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